Implementation of a hot filament assisted chemical vapor deposition system (HFCVD) to obtain the semiconductor tungsten trioxide (WO3)
DOI:
https://doi.org/10.46842/10.46842/ipn.cien.v26n2a09Keywords:
semiconductors, tungsten trioxide, HFCVDAbstract
Tungsten trioxide (WO3) powders were obtained using a HFCVD (Hot Filament Chemical Vapor Deposition) system. Three different colors (royal blue, sky blue and yellow) due to the change of the implemented precursor gas (argon (Ar) or argon with water vapor (Ar+ H2O) or air) were obtained. The powders were evaluated by X-Ray Diffraction (XRD) to determine the crystalline structure, the morphology was studied by Scanning Electron Microscopy (SEM), the elemental chemical composition was obtained by Energy Dispersive Spectroscopy (EDS). Finally, study of the structure was analyzed by RAMAN Spectroscopy. These techniques were able to demonstrate the presence of tungsten trioxide in the powders obtained.
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