Study in DC and AC Regime of Carbon Nanotube Diodes for High Frequency Applications
DOI:
https://doi.org/10.46842/ipn.cien.v23n2a01Keywords:
CNT, Schottky diode, numerical device simulation, compact modeling, DC, high-frequency performanceAbstract
In this paper the static and dynamic performance of two different doping approaches, chemical and electrostatic, in carbon nanotubes (CNT) Schottky diodes with two-dimensional contact geometry is analyzed by means of numerical simulation and compact modeling. For the static performance, the main merit figures of the simulated devices are obtained, such as the rectification factor, storage time, threshold voltage and diode capacitance, and are compared with data available in the literature. Additionally, their transport mechanisms are studied. For the dynamic performance, the cutoff frequency in the forward bias region for the chemical doping diode is estimated based on the analysis of the equivalent circuit and the Schockley diode equation, reaching a frequency in the THz domain. In addition, changes to the design of the device are proposed to achieve an increase in the cutoff frequency, such as improved contact transparency or arrays in parallel of nanotubes.
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